Emission intermittency in silicon nanocrystals
Emission intermittency in silicon nanocrystals
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DOI：
10.1103/physrevb.70.115314
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发表时间：
2004-09-01
影响因子：
3.7
通讯作者：
von Borczyskowski, C
中科院分区：
文献类型：
--
作者：
Cichos, F;Martin, J;von Borczyskowski, C
我们展示了对单个硅纳米晶体的闪烁研究的详细结果。实验表明，与II-VI族半导体纳米晶类似，闪烁过程遵循幂律统计。发现关断时间概率分布与幂律指数的激励强度相关性。由于俄歇辅助过程，强度依赖性被解释为强度依赖性隧道速率。此外，我们还证明了关闭时间分布与纳米晶体集合体发射的漂白和恢复之间的关系，这根据集合体研究进一步了解了眨眼行为。实验数据根据两种可供选择的眨眼模型进行讨论。提供了喷射电荷存在自捕获类极化子态的证据。
We present detailed results of blinking studies on individual silicon nanocrystals. The experiments show, that similar to II-VI semiconductor nanocrystals, the blinking process obeys a power law statistics. An excitation intensity dependence of the power law exponent is found for the off time probability distribution. The intensity dependence is interpreted in terms of an intensity dependent tunneling rate due to Auger assisted processes. Further we demonstrate a relation of the off time distribution to the bleaching and recovery of the emission of nanocrystal ensembles, which gives further insight in the blinking behavior according to ensemble studies. The experimental data is discussed in terms of two alternative blinking models. Evidence is provided for the existence of self-trapped polaron-like states for the ejected charge.