Metallic Layered Germanium Phosphide GeP5 for High Rate Flexible All-Solid-State Supercapacitors
Metallic Layered Germanium Phosphide GeP5 for High Rate Flexible All-Solid-State Supercapacitors
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用于高倍率柔性全固态超级电容器的金属层状磷化锗GeP5
DOI：
10.1039/c8ta06568c
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发表时间：
2018
影响因子：
11.9
通讯作者：
Yongjun Tian
中科院分区：
文献类型：
--
作者：
Bingchao Yang;Anmin Nie;Yukai Chang;Yong Cheng;Fusheng Wen;Jianyong Xiang;Lei Li;Zhongyuan Liu;Yongjun Tian
在本研究中，采用高温高压定向生长技术（HTHP-OGT）制备了具有二维（2D）层状结构的高质量GeP5晶体，其电导率为2.4 × 106 S m−1。经液相剥离后合成的GeP5纳米片作为全固态超级电容器（assp）的电极材料具有广阔的应用前景。制备的GeP5-ASSP具有优异的电化学性能，包括高达1000 V s−1的超高扫描速率，5 mV s−1时高达35.86 F cm−3的高比电容，397.24 W cm−3的功率密度和4.98 mW h cm−3的能量密度。此外，该器件在180°弯曲和10000次循环后的初始电容保留率分别为83.7%和88%，表现出出色的柔韧性和优异的循环稳定性。这些特性表明了金属层状GeP5在柔性储能器件中的应用前景。
In this study, high quality GeP5 crystals with two-dimensional (2D) layered structures and novel electrical conductivity of 2.4 × 106 S m−1 have been prepared under high-temperature high-pressure oriented growth technique (HTHP-OGT). The as-synthesized GeP5 nanoflakes, after liquid phase exfoliation, show promising potential for application as electrode materials in all-solid-state supercapacitors (ASSPs). The as-prepared GeP5-ASSP exhibits excellent electrochemical performances, including an ultrahigh scan rate of 1000 V s−1, a high specific capacitance of up to 35.86 F cm−3 at 5 mV s−1, a great power density of 397.24 W cm−3 and an energy density of 4.98 mW h cm−3. Moreover, the device can retain 83.7% and 88% of the initial capacitance retention at 180° bending and after 10 000 cycles, respectively, showing outstanding flexibility and superior cycling stability. These properties indicate the promising application of the metallic layered GeP5 for flexible energy storage devices.