Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2Te5
Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2Te5
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DOI：
10.1063/1.3383042
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发表时间：
2010-05-15
影响因子：
3.2
通讯作者：
Yeo, Yee-Chia
中科院分区：
文献类型：
--
作者：
Fang, Lina Wei-Wei;Zhao, Rong;Yeo, Yee-Chia
研究了氮掺杂浓度对Ge2Sb2Te5电学性能的影响，并根据掺氮Ge2Sb2Te5材料性能的变化趋势进行了解释。利用氮掺杂对Ge2Sb2Te5结晶温度的影响以及不同氮浓度下的退火变化来解释这一趋势。x射线衍射分析证实了转变为亚稳面心立方相的必要性，并表明在较高氮浓度下直接转变为稳定的六边形密排相会对器件性能产生不利影响。讨论了提高相变存储器件热稳定性和减小复位电流的方法。(C) 2010年美国物理研究所。(doi: 10.1063/1.3383042)
The dependence of the electrical properties of Ge2Sb2Te5 on nitrogen doping concentration was investigated, which was explained based on the trends in the materials properties of nitrogen-doped Ge2Sb2Te5. The effect of nitrogen doping in Ge2Sb2Te5 on the crystallization temperature and changes upon annealing with various nitrogen concentrations were thus exploited to explain the trends. X-ray diffraction analysis corroborates the necessity to transform to the metastable face-centered-cubic phase, and showed that direct conversion to the stable hexagonal-close-packed phase which occurs at higher nitrogen concentrations could adversely affect device performance. Approaches for enhancement of thermal stability and reduction in reset current in phase change memory devices were also discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3383042]