Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE
Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE
复制标题
使用带隙能量控制选择性 MOVPE 的低驱动电压 (1.5 Vp.p.) 和高功率 DFB-LD/调制器集成光源
DOI：
10.1049/el:19960092
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
K. Komatsu
中科院分区：
文献类型：
--
作者：
H. Yamazaki;Y. Sakata;M. Yamaguchi;Y. Inomoto;K. Komatsu
考虑到制造公差，作者降低了DFB- ld /调制器集成光源（DFB/MODs）的调制器驱动电压。通过增加井宽和优化掺杂谱来增强量子受限Stark效应，在保持较大制造公差的同时，在1.5 V下实现了>13 dB消光比和>4 mW (+6 dBm) 100 mA输出功率的DFB/MODS。
The authors have reduced modulator drive voltage in DFB-LD/modulator integrated light sources (DFB/MODs) taking fabrication tolerance into account. By enhancing the quantum confined Stark effect through well width increase and optimising the doping profile, DFB/MODS with >13 dB extinction ratio at 1.5 V and >4 mW (+6 dBm) output power at 100 mA were achieved while maintaining a reasonably large fabrication tolerance.