Watching dynamic self-assembly of web buckles in strained MoS2 thin films
Watching dynamic self-assembly of web buckles in strained MoS2 thin films
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观察应变 MoS2 薄膜中网扣的动态自组装
DOI：
10.1021/acsnano.8b08411
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发表时间：
2019
期刊：
影响因子：
17.1
通讯作者：
Liu Kai
中科院分区：
文献类型：
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作者：
Ren Hongtao;Xiong Zixin;Wang Enze;Yuan Zhiquan;Sun Yufei;Zhu Kunlei;Wang Bolun;Wang Xuewen;Ding Hanyuan;Liu Peng;Zhang Lei;Wu Junqiao;Fan Shoushan;Li Xiaoyan;Liu Kai
具有大的残余压应力和低的界面附着力的薄膜可以从相对刚性的基底上屈曲和分层，这是膜/基底界面的常见失效模式。目前的研究主要集中在各种屈曲模式的几何形状和相关的物理起源基于静态的观点。然而，基本了解的动态传播的干扰，特别是对于复杂的网络干扰，仍然具有挑战性。我们采用应变的二维MoS 2薄膜来研究腹板屈曲现象，因为它们的界面粘附力，即货车德瓦尔斯相互作用，是自然低的。通过一个精确的控制点的启动，可以很容易地触发网的传播，并在现场观察它们的动态传播。有限元模拟表明，网络的形成涉及电话线气泡的传播和多级分支。这些弯曲的半导体薄膜可以通过空间限制形成图案，并可能用于漫反射涂层、微流体通道和析氢反应电极。我们的工作不仅揭示了刚性衬底上的网状物的传播的隐藏机制和运动学，而且还揭示了基于屈曲工程的半导体器件的发展。
Thin films with large compressive residual stress and low interface adhesion can buckle and delaminate from relatively rigid substrates, which is a common failure mode of film/substrate interfaces. Current studies mainly focused on the geometry of various buckling patterns and related physical origins based on a static point of view. However, fundamental understanding of dynamic propagation of buckles, particularly for the complicated web buckles, remains challenging. We adopt strained two-dimensional MoS2thin films to study the phenomenon of web buckling because their interface adhesion, namely van der Waals interaction, is naturally low. With a delicately site-controlled initiation, web buckles can be triggered and their dynamic propagation isin situobserved facilely. Finite element modeling shows that the formation of web buckles involves the propagation and multilevel branching of telephone-cord blisters. These buckled semiconducting films can be patterned by spatial confinement and potentially used in diffuse-reflective coatings, microfluidic channels, and hydrogen evolution reaction electrodes. Our work not only reveals the hidden mechanisms and kinematics of propagation of web buckles on rigid substrates but also sheds light on the development of semiconducting devices based on buckling engineering.