Time-resolved studies of single semiconductor quantum dots
Time-resolved studies of single semiconductor quantum dots
复制标题
DOI：
10.1103/physrevb.59.5021
复制
发表时间：
1999-02
影响因子：
3.7
通讯作者：
V. Zwiller;M. Pistol;D. Hessman;Rolf Cederstrom;W. Seifert;L. Samuelson
中科院分区：
文献类型：
--
作者：
V. Zwiller;M. Pistol;D. Hessman;Rolf Cederstrom;W. Seifert;L. Samuelson
我们提出了单自组装量子点的时间分辨光学研究。这些点是在${\ mathm {Ga}}_{0.5}{\ mathm {In}}_{0.5}\ mathm {P}上用InP的Stranski-Krastanow生长得到的。一种基于电子束光刻后蚀刻的选择性技术，结合使用光学显微镜来提高时间分辨光致发光系统的空间分辨率，使单个量子点的观测成为可能。观测到单个InP点的发射线宽约为3mev。研究了时间分辨光致发光光谱随激发强度的变化规律。在强烈的脉冲激励下，由于状态填充，从更高的能级进料，衰变不再是一个简单的指数。成功地用一个四能级速率方程系统来模拟结果。
We present time-resolved optical studies of single self-assembled quantum dots. The dots were obtained by Stranski-Krastanow growth of InP on ${\mathrm{Ga}}_{0.5}{\mathrm{In}}_{0.5}\mathrm{P}.$ A selective technique based on etching after electron-beam lithography, combined with the use of an optical microscope to enhance the spatial resolution of a time-resolved photoluminescence system, enabled the observation of single quantum dots. The emission linewidth of a single InP dot is observed to be around 3 meV. The evolution of the time-resolved photoluminescence spectra was studied as a function of excitation intensity. Under intense pulsed excitation the decay is no more a simple exponential due to feeding from higher energy levels, as a result of state filling. A four-level rate equation system is successfully used to model the results.