A High‐k Fluorinated P(VDF‐TrFE)‐g‐PMMA Gate Dielectric for High‐Performance Flexible Field‐Effect Transistors
A High‐k Fluorinated P(VDF‐TrFE)‐g‐PMMA Gate Dielectric for High‐Performance Flexible Field‐Effect Transistors
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DOI：
10.1002/adfm.201704780
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发表时间：
2018
影响因子：
19
通讯作者：
Eul‐Yong Shin;H. Cho;Sungwook Jung;Changduk Yang;Yong‐Young Noh
中科院分区：
文献类型：
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作者：
Eul‐Yong Shin;H. Cho;Sungwook Jung;Changduk Yang;Yong‐Young Noh
报道了一种新合成的高介电常数聚合物绝缘体，可用作有机场效应晶体管（OFET）的栅极介电层，该绝缘体是通过原子转移自由基聚合转移将聚（甲基丙烯酸甲酯）（PMMA）接枝到聚（偏二氟乙烯-三氟乙烯）（P（VDF-TrFE））中而获得的。该材料设计概念旨在通过采用非晶 PMMA 作为绝缘体来调整高 k 氟化聚合物电介质的栅极绝缘层的电性能（电容、漏电流、击穿电压和工作稳定性），而无需大幅增加工作电压。通过控制接枝 PMMA 的百分比，获得了具有 7 mol% 接枝 PMMA 的优化 P(VDF-TrFE)-g-PMMA，该 P(VDF-TrFE)-g-PMMA 显示出相当高的电容 (23–30 nF cm−2)、低电压运行和可忽略的电流滞后。高性能低压操作顶栅/底接触OFET，具有广泛使用的高迁移率聚合物半导体，聚[[2,5-双(2-辛基十二烷基)-2,3,5,6-四氢-3,6-二氧吡咯 [3,4-c]吡咯-1,4-二基]-alt-[[2,2′-(2,5-噻吩)双-噻吩并(3,2-b)噻吩]-5,5′-二基]] (DPPT-TT)，和 这里证明了聚([N,N'-双(2-辛基十二烷基)-萘-1,4,5,8-双(二甲酰亚胺)-2,6-二基]-alt-5,5'-(2,2'-联噻吩))。具有 P(VDF-TrFE)-g-PMMA 栅极电介质的 DPPT-TT OFET 具有超过 1 cm2 V−1 s−1 的相当高的场效应迁移率，并且具有出色的运行稳定性。
A newly synthesized high‐k polymeric insulator for use as gate dielectric layer for organic field‐effect transistors (OFETs) obtained by grafting poly(methyl methacrylate) (PMMA) in poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) via atom transfer radical polymerization transfer is reported. This material design concept intents to tune the electrical properties of the gate insulating layer (capacitance, leakage current, breakdown voltage, and operational stability) of the high‐k fluorinated polymer dielectric without a large increase in operating voltage by incorporating an amorphous PMMA as an insulator. By controlling the grafted PMMA percentage, an optimized P(VDF‐TrFE)‐g‐PMMA with 7 mol% grafted PMMA showing reasonably high capacitance (23–30 nF cm−2) with low voltage operation and negligible current hysteresis is achieved. High‐performance low‐voltage‐operated top‐gate/bottom‐contact OFETs with widely used high mobility polymer semiconductors, poly[[2,5‐bis(2‐octyldodecyl)‐2,3,5,6‐tetrahydro‐3,6‐dioxopyrrolo [3,4‐c]pyrrole‐1,4‐diyl]‐alt‐[[2,2′‐(2,5‐thiophene)bis‐thieno(3,2‐b)thiophene]‐5,5′‐diyl]] (DPPT‐TT), and poly([N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)) are demonstrated here. DPPT‐TT OFETs with P(VDF‐TrFE)‐g‐PMMA gate dielectrics exhibit a reasonably high field‐effect mobility of over 1 cm2 V−1 s−1 with excellent operational stability.