Maximizing Transfection Efficiency of Vertically Aligned Silicon Nanowire Arrays
Maximizing Transfection Efficiency of Vertically Aligned Silicon Nanowire Arrays
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DOI：
10.1002/adfm.201503465
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发表时间：
2015-12-09
影响因子：
19
通讯作者：
Voelcker, Nicolas H.
中科院分区：
文献类型：
--
作者：
Elnathan, Roey;Delalat, Bahman;Voelcker, Nicolas H.
垂直排列的硅纳米线（VA-SiNW）阵列正成为一种强大的机械转染基因传递新工具。为了有效地利用该工具，需要消除所需设计参数周围的不确定性。在这里，纳米球光刻和模板金属辅助湿化学蚀刻相结合用于制造具有一定直径，高度和密度的VA-SiNW阵列。这种制造策略可以识别表面形貌的关键参数，从而设计出具有高转染效率的SiNW阵列，将质粒输送到各种人类细胞中，同时保持高细胞活力。这些结果阐明了介导VA-SiNW转染的细胞-物质相互作用，并有可能改变基因治疗和支持未来的治疗方式。
Vertically aligned silicon nanowire (VA-SiNW) arrays are emerging as a powerful new tool for gene delivery by means of mechanical transfection. In order to utilize this tool efficiently, uncertainties around the required design parameters need to be removed. Here, a combination of nanosphere lithography and templated metal-assisted wet chemical etching is used to fabricate VA-SiNW arrays with a range of diameters, heights, and densities. This fabrication strategy allows identification of critical parameters of surface topography and consequently the design of SiNW arrays that deliver plasmid with high transfection efficiency into a diverse range of human cells whilst maintaining high cell viability. These results illuminate the cell-materials interactions that mediate VA-SiNW transfection and have the potential to transform gene therapy and underpin future treatment modalities.