A Review of Recent Progress in β‐Ga 2 O 3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition
A Review of Recent Progress in β‐Ga 2 O 3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition
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β-Ga 2 O 3 外延生长最新进展综述：金属有机化学气相沉积中基底取向和前驱体的影响
DOI：
10.1002/pssa.202200616
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Li, Xiuling
中科院分区：
文献类型：
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作者：
Waseem, Aadil;Ren, Zhongjie;Huang, Hsien-Chih;Nguyen, Kristen;Wu, Xihang;Li, Xiuling
氧化镓（Ga2O3）是十年前出现的一种非常有前途的超宽带隙电力电子半导体。证明了ga2o3在小尺度下的外延生长。为了开发高性能外延结构的可扩展制造，深入了解基本的生长过程、控制参数和机制是必不可少的。本文综述了近年来β - ga2o3薄膜外延生长的研究进展，并指出了在获得高生长速率、低缺陷和高载流子迁移率方面所面临的挑战。与其他外延方法相比，金属有机化学气相沉积（MOCVD）提供了更宽的生长窗口和前驱体选择选项，以最大限度地减少晶体质量和生长速率之间的权衡。在一定的温度范围内，由于不可避免的过早气相反应和高挥发性的亚氧化镓（Ga2O）在高温下的解吸，生长速率与温度成反比。MOCVD前驱体的选择、成核、吸附/解吸/扩散（包括生长在解理面和非解理面上的影响）会影响生长缺陷、背景杂质掺入和载流子迁移率。本文综述了β - ga2o3外延生长的研究现状，分析了提高迁移率和降低背景掺杂浓度的主要因素。所获得的见解有助于提高器件级外延薄膜的可制造性。
Gallium oxide (Ga2O3) is a highly promising ultrawide‐bandgap semiconductor for power electronics that emerged about a decade ago. Epitaxial growth Ga2O3at the small scale is demonstrated. In order to develop scalable manufacturing of high‐performance epitaxial structures, in‐depth understanding of the fundamental growth processes, control parameters, and mechanism is imperative. This review discusses the recent progress in epitaxial growth of β‐Ga2O3films and highlights challenges in obtaining high growth rate, low defects, and high carrier mobilities. Compared with the other epitaxy methods, metal–organic chemical vapor deposition (MOCVD) offers a wider growth window and precursor selection option, to minimize the tradeoff between crystal quality and growth rate. Growth rate is inversely proportional to temperature, within a certain temperature window, because of the unavoidable premature gas‐phase reactions and desorption of the highly volatile gallium suboxide (Ga2O) at elevated temperatures. Growth defects, background impurity incorporation, and carrier mobilities can be affected by the choice of MOCVD precursors, nucleation, and adsorption/desorption/diffusion of adatoms on substrate surfaces of different orientations, including the effect of growing on cleavage and noncleavage planes. This review summarizes the current status of the epitaxial growth of β‐Ga2O3and analyzes the major factors that enhance mobility and reduce background doping concentration. The insights gained help advance the manufacturability of device‐grade epitaxial thin films.