An investigation of the spatial location of proton-induced traps in SiGe HBTs
An investigation of the spatial location of proton-induced traps in SiGe HBTs
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DOI：
10.1109/23.736481
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发表时间：
1998-12
影响因子：
1.8
通讯作者：
J. M. Roldan;G. Niu;W. Ansley;J. Cressler;S. Clark;D. Ahlgren
中科院分区：
文献类型：
--
作者：
J. M. Roldan;G. Niu;W. Ansley;J. Cressler;S. Clark;D. Ahlgren
首次研究了超高真空/化学气相沉积(UHV/CVD)SiGe BiCMOS工艺中46 MeV质子辐照诱导陷阱的产生及其对硅-锗(SiGe)异质结双极晶体管(HBT)电学特性的影响。在质子注量高达10/sup 14/p/cm/sup 2/时，器件的峰值电流增益比辐照前的样品降低了不到8%。SiGe HBT的最大振荡频率和截止频率在10/sup 14/p/cm/sup 2/后仅有轻微的退化。利用二维器件模拟(MEDICI)对正反两种工作模式下的测量数据进行校准，以推断质子诱导陷阱的空间位置。集电基空间电荷区中的陷阱在反向发射极基区中表现为生成/复合(G/R)中心，是位移损伤的结果。发射极-基极间隔氧化物界面的陷阱在正向发射极-基极空间电荷区表现为G/R中心，是电离损伤的结果。综上所述，这些结果表明，UHV/CVD SiGe HBT技术在没有辐射加固的情况下，对质子注量至少高达10/sup 13/p/cm/sup 2/是很健壮的。
The effects of 46 MeV proton irradiation induced trap generation and its impact on the electrical characteristics of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) from an advanced ultrahigh vacuum/chemical vapor deposition (UHV/CVD) SiGe BiCMOS technology are examined and discussed for the first time. At proton fluences as high as 10/sup 14/ p/cm/sup 2/ the peak current gain of the devices degraded by less than 8% compared to the pre-irradiated samples. The maximum oscillation frequency and cutoff frequency of the SiGe HBTs showed only minor degradation after 10/sup 14/ p/cm/sup 2/. Calibration of 2-D device simulation (MEDICI) to measured data in both forward and inverse modes of operation was used to infer the spatial location of the proton-induced traps. Traps in the collector-base space charge region appear as generation/recombination (G/R) centers in the inverse emitter-base region and are the result of displacement damage. Traps at the emitter-base spacer oxide interface appear as G/R centers in the forward emitter-base space charge region and are the result of ionization damage. Taken together, these results suggest that UHV/CVD SiGe HBT technology is robust to proton fluences at least as high as 10/sup 13/ p/cm/sup 2/ without radiation hardening.