SRAM dynamic stability: Theory, variability and analysis
SRAM dynamic stability: Theory, variability and analysis
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SRAM 动态稳定性：理论、变异性和分析
DOI：
10.1109/iccad.2008.4681601
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Garng M. Huang
中科院分区：
文献类型：
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作者：
Wei Dong;Peng Li;Garng M. Huang
100纳米以下的技术扩展显着缩小了SRAM在数据保留、读写操作方面的稳定裕度。传统的静态噪声容限（SNM）不能捕获非线性单元动态，并且变得不适合于具有缩减的访问时间和/或先进的动态读写辅助电路的最先进的SRAM。使用从严格的非线性系统理论中获得的见解，我们定义了急需的SRAM动态噪声容限（DNM）。新定义的DNM不仅捕捉关键SRAM的非线性动态特性，但也提供了有价值的设计见解。此外，我们展示了如何利用系统理论来开发CAD算法，可以分析SRAM的动态稳定特性的速度比蛮力方法快三个数量级，同时保持SPICE级的精度。我们还展示了一个参数的动态稳定性分析方法，适用于低概率细胞故障，导致三个数量级的运行时间加速下的高西格玛参数变化的产量分析。
Technology scaling in sub-100 nm regime has significantly shrunk the SRAM stability margins in data retention, read and write operations. Conventional static noise margins (SNMs) are unable to capture nonlinear cell dynamics and become inappropriate for state-of-the-art SRAMs with shrinking access time and/or advanced dynamic read-write-assist circuits. Using the insights gained from rigorous nonlinear system theory, we define the much needed SRAM dynamic noise margins (DNMs). The newly defined DNMs not only capture key SRAM nonlinear dynamical characteristics but also provide valuable design insights. Furthermore, we show how system theory can be exploited to develop CAD algorithms that can analyze SRAM dynamic stability characteristics three orders of magnitude faster than a brute-force approach while maintaining SPICE-level accuracy. We also demonstrate a parametric dynamic stability analysis approach suitable for low-probability cell failures, leading to three orders of magnitude runtime speedup for yield analysis under high-sigma parameter variations.