14.5% conversion efficiency GaAs solar cell fabricated on Si substrates
14.5% conversion efficiency GaAs solar cell fabricated on Si substrates
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14.5%%20conversion%20efficiency%20GaAs%20solar%20cell%20fabricated%20on%20Si%20substrates
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
M. Yamaguchi
中科院分区：
文献类型：
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作者：
Y. Itoh;T. Nishioka;A. Yamamoto;M. Yamaguchi
采用金属有机化学气相沉积技术在硅衬底上直接制备了AlGaAs-GaAsp+-p-n异质面太阳电池。通过清洗衬底表面和反复中断生长，获得了AM1.5时效率超过14.5%的GaAsOn-Si太阳电池。这是迄今报道的硅衬底上的砷化镓太阳能电池的最高值。电子束感应电流像观察到同质外延生长的GaAs膜中没有观察到的缺陷。这些缺陷可以归因于Si衬底上的GaAs电池的转换效率相对较低。
AlGaAs‐GaAs heteroface p+‐p‐n solar cells have been fabricated directly on Si substrates using metalorganic chemical vapor deposition. GaAs on Si solar cell efficiency as high as exceeding 14.5% at AM1.5 was obtained by cleaning the substrate surface and repeating GaAs film growth interruption. This value is the highest ever reported for GaAs solar cells on Si substrates. Defects, which could not be observed in homoepitaxially grown GaAs film, were observed in the heteroepitaxial GaAs films through electron beam induced current image. Relatively low conversion efficiency of the GaAs cell on Si compared to the GaAs can be attributed to these defects.