A Ferromagnetic Oxide Semiconductor as Spin Injection Electrode in Magnetic Tunnel Junction
A Ferromagnetic Oxide Semiconductor as Spin Injection Electrode in Magnetic Tunnel Junction
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DOI：
10.1143/jjap.44.l896
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发表时间：
2005-07
影响因子：
1.5
通讯作者：
H. Toyosaki;T. Fukumura;K. Ueno;M. Nakano;M. Kawasaki
中科院分区：
文献类型：
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作者：
H. Toyosaki;T. Fukumura;K. Ueno;M. Nakano;M. Kawasaki
由室温铁磁半导体金红石Ti1-xCoxO2-δ和由AlOx势垒分离的铁磁金属Fe0.1Co0.9组成的磁隧道结在15k时显示出正的隧道磁电阻（TMR），比率为~ 11%，表明Ti1-xCoxO2-δ可以用作自旋注入电极。TMR随温度升高而降低，在180k以上消失。由于非晶势垒层和/或结界面的低质量，TMR在高温下的作用可能被非弹性隧道传导所禁止。
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ∼11% at 15 K, indicating that Ti1-xCoxO2-δ can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.