Reversibly Switchable Electromagnetic Device with Leakage-Free Electrolyte
Reversibly Switchable Electromagnetic Device with Leakage-Free Electrolyte
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DOI：
10.1002/aelm.201600044
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发表时间：
2016-06-01
影响因子：
6.2
通讯作者：
Ohta, Hiromichi
中科院分区：
文献类型：
--
作者：
Katase, Takayoshi;Suzuki, Yuki;Ohta, Hiromichi
通过使用薄膜晶体管结构和新开发的无泄漏电解质作为栅极绝缘体，展示了可逆开关电磁氧化物器件。该器件的电学和磁学行为可以在室温下+3 V直流电压下从反铁磁绝缘电切换到铁磁金属。结果为实际存储设备提供了新颖的设计理念。
A reversibly switchable electromagnetic oxide device is demonstrated by using a thin-film transistor structure with a newly developed leakage-free electrolyte as a gate insulator. The electrical and magnetic behavior of the device can be switched from antiferromagnetic insulation to ferromagnetic metal electrically under DC voltage of +3 V at room temperature. The result provides a novel design concept for practical memory devices.