Storage capacity of bidirectional associative memories
Storage capacity of bidirectional associative memories
复制标题
双向联想存储器的存储容量
DOI：
10.1109/ijcnn.1991.170636
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
G. Vachtsevanos
中科院分区：
文献类型：
--
作者：
B.H. Wang;G. Vachtsevanos
基于正确的学习条件，推导了离散双向联想记忆（BAM）的存储容量。正确学习条件是BAM矩阵具有完美召回特性的一个放宽的充分条件。事实上，完美召回属性仅取决于平衡点的形成方式，因为离散BAM总是渐近稳定的。存储容量提供了对BAM的给定输入在给定情况下被完美调用的概率的度量。分析和实验结果之间的比较研究报告。该实验验证证明了解析导出的存储容量公式的准确性。<<ETX>>
The authors derive the storage capacity of a discrete bidirectional associative memory (BAM) based on the correct learning condition. The correct learning condition is a relaxed sufficient condition for a BAM matrix to possess the perfect recall property. In fact, the perfect recall property depends only on the way the equilibrium points are formed, since a discrete BAM is always asymptotically stable. The storage capacity provides a measure of probability that a given input to the BAM is perfectly recalled under the given situation. A comparison study between analytical and experimental results is reported. This experimental verification demonstrates the accuracy of the analytically derived formula for storage capacity.<<ETX>>