Raman analyses of residual stress in diamond thin films grown on Ti6Al4V alloy
Raman analyses of residual stress in diamond thin films grown on Ti6Al4V alloy
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Ti6Al4V 合金上生长的金刚石薄膜残余应力的拉曼分析
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发表时间：
2003
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影响因子：
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通讯作者：
V. Trava
中科院分区：
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作者：
A. F. Azevedo;E. J. Corat;N. F. Leite;N. Ferreira;V. Trava
研究了在Ti6 Al 4V上生长的金刚石薄膜中的应力演化，以全面了解残余应力的形成。残余应力由金刚石薄膜生长过程中产生的本征应力和薄膜与衬底之间热膨胀系数不同引起的外应力组成。在聚结阶段，观察到残余应力由微观结构主导，而在连续薄膜上，热应力更重要。在本工作中，金刚石薄膜具有小晶粒尺寸和良好的尺寸和良好的质量在表面波导微波放电，Surfatron系统，与负偏压施加在等离子体壳和衬底之间。当外加偏压高于-100V时，碳sp3/sp2键的比例增加，成核速率增加，在-250V时成核速率最高。通过拉曼散射光谱研究了薄膜中的应力测量和sp3含量。总残余应力为压应力，在0 ~-200 V偏压下，残余压应力为-1.52 ~-1.48 GPa，高于-200 V偏压时，残余压应力急剧增加至-1.80 GPa。金刚石成核密度通过俯视SEM图像来评估。
The stress evolution in diamond films grown on Ti6Al4V was investigated in order to develop a comprehensive view of the residual stress formation. Residual stress is composed of intrinsic stress induced during diamond film growth and extrinsic stress caused by the different thermal expansion coefficients between the film and substrate. In the coalescence stage it has been observed that the residual stress is dominated by the microstructure, whereas on continuous films, the thermal stress is more important. In this work diamond thin films with small grain size and good size and good quality were obtained in a surface wave-guide microwave discharge, the Surfatron system, with a negative bias voltage applied between the plasma shell and substrate. For above of -100V applied bias, the ratio of carbon sp3/sp2 bond may increase and the nucleation rate increase arising the high value at the -250V applied bias. Stress measurements and sp3 content in the film were studied by Raman scattering spectroscopy. The total residual stress is compressive and varied from -1.52 to -1.48 GPa between 0 and -200 V applied bias, respectively, and above the -200 V, the compressive residual stress increased drastically to -1.80 GPa. The diamond nucleation density was evaluated by top view SEM images.