Comparative study of As and Cu doping stability in CdSeTe absorbers
Comparative study of As and Cu doping stability in CdSeTe absorbers
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DOI：
10.1016/j.solmat.2021.111012
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发表时间：
2021-02-18
影响因子：
6.9
通讯作者：
Sankin, Igor
中科院分区：
文献类型：
--
作者：
Krasikov, Dmitry;Guo, Da;Sankin, Igor
掺铜镉镉薄膜太阳电池长期退化的原因近二十年来一直是人们讨论的话题。然而，这种退化的潜在机制，特别是高性能CdSeTe器件中铜掺杂与氯的相互作用，仍然缺乏详细的了解。在这项研究中，我们对这一现象背后的基本物理提供了一致的理论分析。然后，我们确定了在铜掺杂的氯化镉硒光伏中无法完全消除的主要器件退化机制。最后，我们得出结论，在使用砷吸收剂掺杂时，这一关键机制在CdSeTe光伏中是不存在的，这解释了这一新技术所表现出的显著的稳定性。对掺铜和掺砷的氯化镉SeTe电池的加速寿命试验结果支持了理论结论。
The reasons behind the long-term degradation of Cu-doped CdTe thin-film solar cells have been a topic of dis-cussion for almost two decades. Yet the underlying mechanisms of such degradation, especially interactions of Cu doping with Cl in high-performance CdSeTe devices, still lack detailed understanding. In this study, we provide a consistent theoretical analysis of the fundamental physics behind this phenomenon. We then identify the dominant device degradation mechanism that cannot be completely eliminated in Cu-doped chlorinated CdSeTe-based PV. Finally, we conclude that this key mechanism is absent in CdSeTe PV when using arsenic absorber doping, which explains the remarkable stability demonstrated by this new technology. Theoretical conclusions are supported by the results of accelerated life tests on Cu-and As-doped chlorinated CdSeTe cells.