High electron mobility in strained Si channel of heterostructure with abrupt interface
High electron mobility in strained Si channel of heterostructure with abrupt interface
复制标题
具有突变界面的异质结构应变硅通道中的高电子迁移率
DOI：
10.1088/0268-1242/13/8a/040
复制
发表时间：
1998
影响因子：
1.9
通讯作者：
M. Miyao
中科院分区：
文献类型：
--
作者：
N. Sugii;K. Nakagawa;Y. Kimura;S. Yamaguchi;M. Miyao
通过分子束外延（MBE）结合固相外延（SPE）生长具有高电子迁移率的异质结构。 SPE 生长完全抑制了 Si 沟道层顶部层中的 Ge 偏析。高分辨率横截面透射电子显微镜观察表明，与 MBE 生长的样品相比，SPE 生长技术形成的异质界面非常平坦。具有梯度缓冲层的 SPE 生长样品的电子迁移率比没有此类层的样品高出近一个数量级。具有梯度缓冲层的样品在 15 K 时获得了高电子迁移率 ()。
heterostructures with high electron mobility were grown by molecular beam epitaxy (MBE) combined with solid-phase epitaxy (SPE). The SPE growth completely suppressed Ge segregation in the layer on top of the Si channel layer. High-resolution cross-sectional transmission electron microscopy observation revealed that the heterointerfaces formed by the SPE growth technique were very flat compared with those for the MBE-grown samples. The electron mobility for an SPE-grown sample with a graded buffer layer was nearly one order of magnitude higher than without such a layer. A high electron mobility of was obtained at 15 K for the sample with a graded buffer layer ().