Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
复制标题
DOI：
10.1063/1.1339846
复制
发表时间：
2001-01
影响因子：
4
通讯作者：
H. Saito;K. Nishi;S. Sugou
中科院分区：
文献类型：
--
作者：
H. Saito;K. Nishi;S. Sugou
在InAlGaAs层/InP (311)B衬底上形成了密度为9×1010 cm−2的InAs量子点。在室温下，将具有五周期堆叠InAs QD层的激光器工作在基态（λ≈1.6 μm）下，基态的最大模态增益为20 cm−1。我们在室温下获得了380 a /cm2的阈值电流密度，并在77 ~ 220 K的温度范围内观察到温度不敏感的阈值电流。
InAs quantum dots (QDs) with a high density of 9×1010 cm−2 are formed on InAlGaAs layer/InP (311)B substrates. Lasers having five-period stacked InAs QD layers are operated in the ground state (λ≈1.6 μm) at room temperature, and the maximal modal gain of the ground state is measured to be 20 cm−1. We obtained a threshold current density of 380 A/cm2 at room temperature, and observed the temperature-insensitive threshold current at temperatures from 77 to 220 K.