Atomic scale study of the life cycle of a dislocation in graphene from birth to annihilation
Atomic scale study of the life cycle of a dislocation in graphene from birth to annihilation
复制标题
DOI：
10.1038/ncomms3098
复制
发表时间：
2013-06-01
影响因子：
16.6
通讯作者：
Kaiser, U.
中科院分区：
文献类型：
--
作者：
Lehtinen, O.;Kurasch, S.;Kaiser, U.
位错是材料科学中的关键实体之一，控制着任何晶体材料的性质。因此，了解它们的生命周期，从创建到湮灭通过运动和与其他位错，点缺陷和表面的相互作用，是至关重要的。不幸的是，原子尺度的调查在一个散装物体的位错演化远远超出了目前的表征技术的空间和时间分辨率的限制。在这里，我们克服了实验的限制，通过研究二维石墨烯在像差校正的透射电子显微镜，利用撞击高能电子成像和刺激原子尺度的形态变化的材料。由此产生的转变是在原位，原子的原子，显示从出生到湮灭的位错的整个生命周期。我们的实验，结合原子模拟，揭示了在二维系统中的位错的演变，由显着的长程面外屈曲。
Dislocations, one of the key entities in materials science, govern the properties of any crystalline material. Thus, understanding their life cycle, from creation to annihilation via motion and interaction with other dislocations, point defects and surfaces, is of fundamental importance. Unfortunately, atomic-scale investigations of dislocation evolution in a bulk object are well beyond the spatial and temporal resolution limits of current characterization techniques. Here we overcome the experimental limits by investigating the two-dimensional graphene in an aberration-corrected transmission electron microscope, exploiting the impinging energetic electrons both to image and stimulate atomic-scale morphological changes in the material. The resulting transformations are followed in situ, atom-by-atom, showing the full life cycle of a dislocation from birth to annihilation. Our experiments, combined with atomistic simulations, reveal the evolution of dislocations in two-dimensional systems to be governed by markedly long-ranging out-of-plane buckling.