The Complex Interaction of Spectroscopic Shifts and Electronic Properties in Semiconductor Nanocrystal Films
The Complex Interaction of Spectroscopic Shifts and Electronic Properties in Semiconductor Nanocrystal Films
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DOI：
10.1021/jz3021364
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发表时间：
2013-02-21
影响因子：
5.7
通讯作者：
Foos, Edward E.
中科院分区：
文献类型：
--
作者：
Foos, Edward E.
吸收光谱传统上是研究溶液合成半导体纳米晶体的强大技术，可以快速、轻松地获得有关样品的尺寸、分散性、浓度和整体质量的信息。当这些材料通过配体交换产生薄而致密的薄膜时，可以观察到光谱向更高和更低能量的转变。纳米晶间距离的减小会导致薄膜整体介电常数的变化以及电子耦合的增加，从而产生红移。同时，表面氧化具有增加限制的作用，产生蓝移。本视角重点关注当前感兴趣的材料 PbSe，以及将这些光谱变化与光电特性相关联的潜力，强调了文献中的最新工作和需要进一步研究的领域。
Absorption spectroscopy has traditionally served as a powerful technique for the study of solution synthesized semiconductor nanocrystals, enabling information on the size, dispersity, concentration, and overall quality of a sample to be obtained quickly and easily. When thin, densely packed films of these materials are produced through ligand exchange, spectroscopic shifts to both higher and lower energy are observed. Reduction of the internanocrystal distance can result in both a change to the overall dielectric constant of the film as well as increased electronic coupling, producing a redshift. At the same time, surface oxidation has the effect of increasing the confinement, producing a blueshift. This Perspective focuses on PbSe, a material of current interest, and the potential for correlating these spectroscopic shifts to optoelectronic properties, highlighting both recent work in the literature and areas in need of additional study.