Rocking curve measurements revisited

Rocking curve measurements revisited
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重新审视摇摆曲线测量

DOI:
10.1107/s1600576714012527
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发表时间:
2014
影响因子:
6.1
通讯作者:
P. V. Vaerenbergh
P. V. Vaerenbergh
中科院分区:
材料科学3区
文献类型:
--
作者:
F. Masiello;G. Cembali;A. Chumakov;S. Connell;C. Ferrero;J. Härtwig;I. Sergeev;P. V. Vaerenbergh

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为了正确地分析高质量晶体的高分辨率摇摆曲线,需要特别努力地估计来自实验装置的系统贡献。这篇文章着重介绍了需要特殊分析处理的主要领域,并介绍了使用不同方法解决该问题所取得的结果,以及针对高质量硅和钻石晶体的一些典型结果。
In order to correctly analyse high-resolution rocking curves of high-quality crystals, a special effort is needed to estimate the systematic contributions coming from the experimental setup. This article highlights the main areas that require special analytical treatment and presents results obtained using different approaches to the problem, as well as some typical results for high-quality silicon and diamond crystals.