Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs
Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs
复制标题
DOI：
10.1109/led.2005.857725
复制
发表时间：
2005-10
影响因子：
4.9
通讯作者：
Gen Tsutsui;Masumi Saitoh;Toshiro Hiramoto
中科院分区：
文献类型：
--
作者：
Gen Tsutsui;Masumi Saitoh;Toshiro Hiramoto
首次实验研究了绝缘体上硅（SOI）厚度（t/sub SOI/）从32 nm到2.3 nm范围内的[110]取向异质体（UTB）pMOSFET的上级迁移率。结果表明，[110] UTBpMOSFET的迁移率远高于传统（100）pMOSFET的通用迁移率曲线，直到t/sub SOI/减薄到3 nm时才出现退化。根据迁移率的温度依赖性讨论了[110] UTBpMOSFET中的散射机制。[110] pMOSFET中UTB区的高迁移率归因于载流子限制的子带调制和垂直于沟道表面的较重空穴有效质量。
The superior mobility in [110]-oriented ultrathin body (UTB) pMOSFETs with silicon-on-insulator (SOI) thickness (t/sub SOI/) ranging from 32 down to 2.3 nm is experimentally examined for the first time. It is shown that the mobility in [110] UTB pMOSFETs, which is much higher than the universal curve in conventional (100) pMOSFETs, is not degraded until t/sub SOI/ is thinned to 3 nm. Scattering mechanisms in [110] UTB pMOSFETs are discussed on the basis of the temperature dependence of the mobility. The high mobility in the UTB regime in [110] pMOSFET is attributed to subband modulation by carrier confinement and heavier hole effective mass normal to the channel surface.