Control of AlN buffer/sapphire substrate interface for AlN growth
Control of AlN buffer/sapphire substrate interface for AlN growth
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DOI：
10.1002/pssc.201001186
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发表时间：
2011-07
期刊：
影响因子：
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通讯作者：
Reina Miyagawa;Shibo Yang;H. Miyake;K. Hiramatsu
中科院分区：
文献类型：
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作者：
Reina Miyagawa;Shibo Yang;H. Miyake;K. Hiramatsu
为了在蓝宝石衬底上制备高质量的氮化铝缓冲层，研究了氮化铝缓冲层的生长条件。由于Al原子表面迁移能力弱，高质量AlN的生长极为困难。因此，我们集中在AlN缓冲层，并检查的生长条件，同时控制的厚度和生长温度。在1250 °C的生长温度下在AlN缓冲层上生长的AlN层的结晶质量得到改善，并且对于（0002）和（10-10）衍射获得的X射线摇摆曲线（XRC）的半高宽（FWHM）值分别为138和464弧秒。此外，当AlN缓冲层在高温下生长时，形成AlOxN 1-x（© 2011 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）。
The growth condition of AlN buffer layer has been studied in order to fabricate a high-quality AlN layer on a sapphire substrate. The growth of high-quality AlN is extremely difficult due to the weak surface migration of Al adatoms. Therefore we have focused on the AlN buffer layer, and examined the growth condition while controlling the thickness and growth temperature. The crystalline quality of the AlN layer grown on an AlN buffer layer at a growth temperature of 1250 °C was improved, and the full width at half-maximum (FWHM) value of the X-ray rocking curve (XRC) obtained for (0002) and (10-10) diffractions were 138 and 464 arcsec, respectively. Moreover, AlOxN1-x was formed when the AlN buffer layer was grown at a high temperature (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)