Weak antilocalization and linear magnetoresistance in the surface state of SmB6
Weak antilocalization and linear magnetoresistance in the surface state of SmB6
复制标题
SmB6表面态的弱反局域化和线性磁阻
DOI：
10.1103/physrevb.94.205114
复制
发表时间：
2016
影响因子：
3.7
通讯作者：
Xia, Jing
中科院分区：
文献类型：
--
作者：
Thomas, S.;Kim, D. J.;Chung, S. B.;Grant, T.;Fisk, Z.;Xia, Jing
强相关的近藤绝缘体以其特有的低温残余传导而闻名，最近被证明是由拓扑近藤绝缘体（TKI）理论预测的坚固的金属表面产生的。光发射、量子振荡和磁掺杂实验为类狄拉克色散和拓扑保护提供了证据。问题出现在自旋动量锁定和电子相互作用的特征是否可以在输运测量中解决。在这里，我们报告了金属表面传导到mK温度。在小的垂直磁场下，我们观察到表面的弱反局域化效应。在较大的垂直磁场下，表面表现出不同寻常的线性磁电阻，类似于铋基拓扑绝缘体和石墨烯中的线性磁电阻。
The strongly correlated Kondo insulatoris known for its peculiar low-temperature residual conduction, which has recently been demonstrated to arise from a robust metallic surface, as predicted by the theory of topological Kondo insulator (TKI). Photoemission, quantum oscillation, and magnetic doping experiments have provided evidence for the Dirac-like dispersion and topological protection. Questions arise as to whether signatures of spin-momentum locking and electron interaction could be resolved in transport measurements. Here we report metallic conduction of surface down to mK temperatures. We observe in the surface the weak-antilocalization (WAL) effect at small perpendicular magnetic fields. At larger perpendicular magnetic fields, the surface exhibits an unusual linear magnetoresistance similar to those found in Bi-based topological insulators and in graphene.