Temperature dependence of the photoluminescence and scintillation decay of Yb3+-doped YAlO3 single crystals
Temperature dependence of the photoluminescence and scintillation decay of Yb3+-doped YAlO3 single crystals
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DOI：
10.1063/1.1939081
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发表时间：
2005-07
影响因子：
3.2
通讯作者：
J. Pejchal;M. Nikl;J. B. Shim;A. Yoshikawa;T. Fukuda;A. Voloshinovskii;V. Múčka;D. Yoon
中科院分区：
文献类型：
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作者：
J. Pejchal;M. Nikl;J. B. Shim;A. Yoshikawa;T. Fukuda;A. Voloshinovskii;V. Múčka;D. Yoon
对于 x=0.02 和 0.3 的两个样品并使用紫外（x 射线）纳秒脉冲激发，给出了 YbxY1−xAlO3 闪烁体在 10(80)–300K 范围内发光衰减参数的温度依赖性。超过 180K 时，闪烁衰变由两个样本中几纳秒的衰变时间的快速、接近指数的分量控制，并且所有较慢的衰变分量变得可以忽略不计。由于 Yb3+ 电荷转移发光的浓度猝灭，x=0.3 样品相对于 x=0.02 样品在整个温度范围内实现了更快的闪烁响应。
Temperature dependence of luminescence decay parameters of YbxY1−xAlO3 scintillator within 10(80)–300K is presented for two samples with x=0.02 and 0.3 and using the ultraviolet (x-ray) nanosecond pulsed excitations. Above 180K the scintillation decay is governed by a fast, nearly exponential component in both samples of the decay time of several nanoseconds and all the slower decay components become negligible. Faster scintillation response of the x=0.3 sample is achieved in the whole temperature range with respect to the x=0.02 one due to the concentration quenching of charge-transfer luminescence of Yb3+.