A SiC MEMS resonant strain sensor for harsh environment applications
A SiC MEMS resonant strain sensor for harsh environment applications
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DOI：
10.1109/jsen.2007.891997
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发表时间：
2007-03-01
影响因子：
4.3
通讯作者：
Pisano, Albert P.
中科院分区：
文献类型：
--
作者：
Azevedo, Robert G.;Jones, Debbie G.;Pisano, Albert P.
在本文中，我们提出了一种适用于恶劣环境应用的碳化硅 MEMS 谐振应变传感器。该传感器是一种平衡质量双端音叉 (BDETF)，由沉积在硅基板上的 3C-SiC 制成。使用氧化硅掩模在等离子蚀刻室中蚀刻 SiC，实现 5:1 的选择性和 2500 埃/分钟的蚀刻速率。该器件在大气压力下谐振，工作温度范围为室温至 300 摄氏度以上。该器件还经受了 10 000 g 冲击（平面外），而没有损坏或谐振频率发生变化。 BDETF 表现出 66 Hz/mu epsilon 的应变灵敏度，并在 10 至 20 kHz 的带宽内实现了 0.11 mu epsilon 的应变分辨率，与最先进的硅传感器相当。
In this paper, we present a silicon carbide MEMS resonant strain sensor for harsh environment applications. The sensor is a balanced-mass double-ended tuning fork (BDETF) fabricated from 3C-SiC deposited on a silicon substrate. The SiC was etched in a plasma etch chamber using a silicon oxide mask, achieving a selectivity of 5:1 and etch rate of 2500 angstrom/min. The device resonates at atmospheric pressure and operates from room temperature to above 300 degrees C. The device was also subjected to 10 000 g shock (out-of-plane) without damage or shift in resonant frequency. The BDETF exhibits a strain sensitivity of 66 Hz/mu epsilon and achieves a strain resolution of 0.11 mu epsilon in a bandwidth from 10 to 20 kHz, comparable to state-of-the-art silicon sensors.