Thermal analysis and design of GaN‐based LEDs for high power applications
Thermal analysis and design of GaN‐based LEDs for high power applications
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DOI：
10.1002/pssc.200303466
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发表时间：
2003-12
期刊：
影响因子：
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通讯作者：
L. Kim;G. W. Lee;W. Hwang;J. Yang;M. Shin
中科院分区：
文献类型：
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作者：
L. Kim;G. W. Lee;W. Hwang;J. Yang;M. Shin
本文对蓝色和白色 GaN 基 LED 进行了热分析。热分析包括 LED 芯片和环氧树脂封装表面的实验温度测量和有限元计算。使用向列液晶进行直接片上温度测量，在 3.9 V 的正向电压下，在约 450 至 500 μm 的范围内产生过渡边界为 43 °C 的热点。测量环氧树脂封装的表面温度作为输入功率的函数，并呈现线性关系。采用有限元方法计算样品的温度分布，模拟数据与实验结果吻合较好。 （© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
In this paper, a thermal analysis was made on blue and white GaN-based LEDs. The thermal analysis consists of experimental temperature measurements and finite element calculations on the LED chips and surface of epoxy package. The direct on-chip temperature measurement using a nematic liquid crystal resulted in a hot spot with a transition boundary of 43 °C in a range of about 450 to 500 μm under a forward voltage of 3.9 V. The surface temperature of the epoxy package was measured as a function of input power and it exhibits a linear relationship. The finite element method was used for the calculation of temperature distributions for samples and the simulated data showed good agreement with the experimental results. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)