Current Status of AIST X-ray-Absorption-Spectroscopy (XAFS) Instrument with 100-Pixel Superconducting-Tunnel-Junction Array Detector

Current Status of AIST X-ray-Absorption-Spectroscopy (XAFS) Instrument with 100-Pixel Superconducting-Tunnel-Junction Array Detector
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具有 100 像素超导隧道结阵列探测器的 AIST X 射线吸收光谱 (XAFS) 仪器的现状

DOI:
10.1007/s10909-013-1074-4
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发表时间:
2014
影响因子:
2
通讯作者:
M. Ohkubo
M. Ohkubo
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
S. Shiki;M. Ukibe;N. Matsubayashi;N. Zen;M. Koike;Y. Kitajima;M. Ohkubo

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我们建立了一个荧光产额X射线吸收精细结构(XAFS)装置,用于测量轻元素基体中痕量轻元素杂质周围的局域结构。我们的XAFS仪器与100像素的STJ探测器,现在是在日常操作阶段,并开放给用户在同步辐射设施(KEK PF)。100个像素的平均能量分辨率为11.80.6,在400 eV的敏感区域为1 mm。作为功能材料的一个例子,我们成功地测量了氮的K-边缘XAFS光谱的化合物半导体,4 H-SiC,与氮掺杂剂浓度为300 ppm。弱N-K线与强C-K线明显分离。
We constructed a fluorescence yield X-ray absorption fine structure (XAFS) apparatus for the measurement of local structure around trace light element impurities in light element matrices. Our XAFS instrument with a 100-pixel STJ detector is now in the stage of routine operation and open to users at a synchrotron radiation facility (KEK PF). The average energy resolution of the 100 pixels is 11.80.6 at 400 eV in a sensitive area of 1 mm. As an example of functional materials, we successfully measured nitrogen K-edge XAFS spectra of a compound semiconductor, 4H-SiC, with a nitrogen dopant concentration of 300 ppm. The faint N-K line was clearly separated from the strong C-K line.