Photon counting 1060-nm hybrid photomultiplier with high quantum efficiency
Photon counting 1060-nm hybrid photomultiplier with high quantum efficiency
复制标题
具有高量子效率的光子计数 1060 nm 混合光电倍增管
DOI：
10.1109/55.748909
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发表时间：
1999
影响因子：
4.9
通讯作者：
V. Aebi
中科院分区：
文献类型：
--
作者：
R. A. La Rue;G. Davis;D. Pudvay;K. Costello;V. Aebi
本文介绍了一种灵敏度为900 ~ 1300 nm的超低噪声、高速混合光电倍增管。该器件也称为增强型光电二极管（IPD），使用具有四元In/69/Ca/31/As/67/P/33/光吸收层的有源转移电子（TE）光电阴极和GaAs肖特基雪崩光电二极管（SAPD）阳极。该探测器具有超过15000的组合电子轰击和雪崩增益，这足以克服噪声，并提供约85%的高内部计数效率。在1.5V的有效阴极偏压下，室温阴极暗计数率为6.67/spl times/10/sup 5/s。冷却基本上对应于几乎等于In/69/Ca/31/As/67/P/33/层的带隙的暗电流激活能而减小了这一点。
An ultra-low-noise, high-speed, hybrid photomultiplier tube sensitive from 900 to 1300 nm optical wavelength is described. The device, also known as an intensified photodiode (IPD), uses an active transferred electron (TE) photocathode with the quaternary In/sub .69/Ca/sub .31/As/sub .67/P/sub .33/ photo-absorbing layer and a GaAs Schottky avalanche photodiode (SAPD) anode. The detector has a combined electron bombarded and avalanche gain of over 15000 which is sufficient to overcome preamplifier noise and provide high internal counting efficiency of approximately 85%. At an active cathode bias of 1.5 V the room temperature cathode dark count rate is 6.67/spl times/10/sup 5//s. Cooling reduces this substantially corresponding to a dark current activation energy almost equal to the bandgap of the In/sub .69/Ca/sub .31/As/sub .67/P/sub .33/ layer.