Hysteresis in the quantum Hall regimes in electron double quantum well structures
Hysteresis in the quantum Hall regimes in electron double quantum well structures
复制标题
电子双量子阱结构中量子霍尔区的磁滞
DOI：
10.1103/physrevb.71.153307
复制
发表时间：
2004
影响因子：
3.7
通讯作者：
J. Simmons
中科院分区：
文献类型：
--
作者：
W. Pan;J. Reno;J. Simmons
We present here experimental results on magnetotransport coefficients in electron double quantum well (DQW) structures. Consistent with previous studies, transport hysteresis is is observed in the electron DQWs. Furthermore, in our gated DQW samples, by varying the top layer Landau level filling $({\ensuremath{\nu}}_{\mathit{\text{top}}})$ while maintaining a relatively constant filling factor in the bottom layer $({\ensuremath{\nu}}_{\mathit{bot}})$, we are able to explain the sign of ${R}_{xx}(\text{up})\text{\ensuremath{-}}{R}_{xx}(\text{down})$, where ${R}_{xx}(\text{up})$ is the magnetoresistance when the gate voltage ${V}_{g}$ is swept up and ${R}_{xx}(\text{down})$ when ${V}_{g}$ is swept down. Interestingly, at small magnetic fields hysteresis is generally stronger when the top quantum well is in the even integer quantum Hall effect (IQHE) regime (e.g., ${\ensuremath{\nu}}_{\mathit{\text{top}}}=2$) than in the odd IQHE regime (e.g, ${\ensuremath{\nu}}_{\mathit{\text{top}}}=1$). While at higher $B$ fields, the hysteresis at ${\ensuremath{\nu}}_{\mathit{\text{top}}}=1$ becomes the strongest. The switching occurs around the $B$ field at ${\ensuremath{\nu}}_{\mathit{bot}}=3$.
We present here experimental results on magnetotransport coefficients in electron double quantum well (DQW) structures. Consistent with previous studies, transport hysteresis is is observed in the electron DQWs. Furthermore, in our gated DQW samples, by varying the top layer Landau level filling $({\ensuremath{\nu}}_{\mathit{\text{top}}})$ while maintaining a relatively constant filling factor in the bottom layer $({\ensuremath{\nu}}_{\mathit{bot}})$, we are able to explain the sign of ${R}_{xx}(\text{up})\text{\ensuremath{-}}{R}_{xx}(\text{down})$, where ${R}_{xx}(\text{up})$ is the magnetoresistance when the gate voltage ${V}_{g}$ is swept up and ${R}_{xx}(\text{down})$ when ${V}_{g}$ is swept down. Interestingly, at small magnetic fields hysteresis is generally stronger when the top quantum well is in the even integer quantum Hall effect (IQHE) regime (e.g., ${\ensuremath{\nu}}_{\mathit{\text{top}}}=2$) than in the odd IQHE regime (e.g, ${\ensuremath{\nu}}_{\mathit{\text{top}}}=1$). While at higher $B$ fields, the hysteresis at ${\ensuremath{\nu}}_{\mathit{\text{top}}}=1$ becomes the strongest. The switching occurs around the $B$ field at ${\ensuremath{\nu}}_{\mathit{bot}}=3$.
库仑阻力作为磁场中可压缩态性质的探针
影响因子：
8.6
作者：
K. Muraki;J.G. S. Lok;S. Kraus;W. Dietsche;K. von Klitzing;D. Schuh;M. Bichler;W. Wegscheider
通讯作者：
W. Wegscheider