X-Band MMIC Balanced Frequency Doubler based on Graphene Diodes

X-Band MMIC Balanced Frequency Doubler based on Graphene Diodes
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基于石墨烯二极管的 X 频段 MMIC 平衡倍频器

DOI:
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发表时间:
2019
期刊:
Intelligent Memory Systems
影响因子:
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通讯作者:
R. Negra
R. Negra
中科院分区:
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文献类型:
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作者:
A. Hamed;M. Saeed;Zhenxing Wang;M. Shaygan;D. Neumaier;R. Negra

文献摘要

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在本文中,我们展示了第一个采用石墨烯二极管的倍频器电路的设计、制造和表征。利用最先进的石墨烯二极管的非线性特性,在 500 μm 厚的石英基板上实现了完全集成的平衡微波倍频器。所提出的电路显示了 7-13 GHz 的宽带工作频率,并在 9.2 GHz 的输出频率下实现了 -25.3 dB 的转换增益和 -15.3 dBm 的输出功率。
In this paper, we demonstrate the design, fabrication, and characterisation of the first frequency doubler circuit employing graphene diodes. Exploiting the nonlinearity reported for state-of-the-art graphene diodes, a fully integrated, balanced microwave frequency doubler is realised on a 500-μm thick quartz substrate. The presented circuit shows broadband operation from 7-13 GHz and achieves −25.3 dB of conversion gain and −15.3 dBm of output power at an output frequency of 9.2 GHz.