Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
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DOI：
10.1021/acsomega.9b00420
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发表时间：
2019-04-01
期刊：
影响因子：
4.1
通讯作者：
Toko, Kaoru
中科院分区：
文献类型：
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作者：
Nakajima, Yoshiki;Murata, Hiromasa;Toko, Kaoru
多层石墨烯（MLG）的低温合成对于将先进电子器件与碳材料相结合至关重要。我们研究了气相合成MLG的溅射沉积碳原子的金属涂层绝缘体。具有高C固溶度的Ni、Co和Fe催化剂使我们能够在400 ℃下形成MLG。MLG的畴尺寸和表面覆盖率由C原子的供给量和与C的固溶量相关的金属层的厚度决定。对于1 μ m厚的Ni层，获得了2.5 μ m的平均畴尺寸和约50%的表面覆盖率。透射电子显微镜证实了MLG层的高结晶质量，尽管加工温度低。因此，这种简单的溅射技术具有在各种平台上集成石墨烯基器件的巨大潜力。
Low-temperature synthesis of multilayer graphene (MLG) is essential for combining advanced electronic devices with carbon materials. We investigated the vapor-phase synthesis of MLG by sputtering deposition of C atoms on metal-coated insulators. Ni, Co, and Fe catalysts, which have high C solid solubility, enabled us to form MLG at 400 degrees C. The domain size and surface coverage of MLG were determined by the supplied amount of C atoms and the thickness of the metal layer associated with the solid solution amount of C. An average domain size of 2.5 mu m and surface coverage of approximately 50% were obtained for a 1 mu m thick Ni layer. Transmission electron microscopy demonstrated the high crystalline quality of the MLG layer despite the low processing temperature. Therefore, this simple sputtering technique has great potential for integrating graphene-based devices on various platforms.