Photoemission and X‐ray absorption studies of the electronic structure of GaN‐based diluted magnetic semiconductors
Photoemission and X‐ray absorption studies of the electronic structure of GaN‐based diluted magnetic semiconductors
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DOI：
10.1002/pssb.200565329
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发表时间：
2006-06
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通讯作者：
J. I. Hwang;Y. Ishida;M. Kobayashi;Y. Osafune;T. Mizokawa;A. Fujimori;Y. Takeda;K. Terai;S. Fujimori;Y. Saitoh;Y. Muramatsu;A. Tanaka;T. Kondo;H. Munekata;M. Hashimoto;H. Tanaka;S. Hasegawa;H. Asahi
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文献类型：
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作者：
J. I. Hwang;Y. Ishida;M. Kobayashi;Y. Osafune;T. Mizokawa;A. Fujimori;Y. Takeda;K. Terai;S. Fujimori;Y. Saitoh;Y. Muramatsu;A. Tanaka;T. Kondo;H. Munekata;M. Hashimoto;H. Tanaka;S. Hasegawa;H. Asahi
我们使用光电子能谱（PES）和X射线吸收谱（XAS）研究了Cr和Mn掺杂GaN的电子结构。在L-边缘处的Cr和Mn XAS表明Cr和Mn离子在四面体晶体场中，并且它们的价态分别为三价和二价。当Cr和Mn掺杂到GaN中时，发现在GaN的带隙区域中形成新的状态。共振光电子能谱（RPES）显示，Cr 3d偏态密度（PDOS）的主要结构出现在GaN的带隙内，而Mn 3d PDOS的主要结构出现在GaN的价带内，并在GaN的价带顶上方形成一个肩峰，这表明Ga 1-xCrxN和Ga 1-xMnxN的掺杂诱导态特征不同。（© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have investigated the electronic structure of Cr‐ and Mn‐doped GaN using photoemission spectroscopy (PES) and X‐ray absorption spectroscopy (XAS). Cr and Mn XAS at the L‐edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band‐gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence‐band maximum of GaN, indicating that the character of the doping‐induced states is different between Ga1–xCrxN and Ga1–xMnxN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)