High-Quality Graphenes via a Facile Quenching Method for Field-Effect Transistors
High-Quality Graphenes via a Facile Quenching Method for Field-Effect Transistors
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DOI：
10.1021/nl803025e
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发表时间：
2009-04-01
期刊：
影响因子：
10.8
通讯作者：
Lee, S. T.
中科院分区：
文献类型：
--
作者：
Tang, Y. B.;Lee, C. S.;Lee, S. T.
通过在碳酸氢铵水溶液中简单地淬火热石墨来制造尺寸高达0.1 mm的单层和少层石墨烯片。用透射电子显微镜、原子力显微镜和拉曼光谱表征石墨烯片的身份和厚度。除了其简单性和可扩展性之外，本发明的合成可以产生在尺寸、纯度和晶体质量方面具有优异品质的石墨烯片。所生产的石墨烯片可以容易地转移到固体基底上用于进一步加工。基于单个石墨烯的场效应晶体管被制造并显示出具有高的双极载流子迁移率。
Single- and few-layer graphene sheets with sizes up to 0.1 mm were fabricated by simply quenching hot graphite in an ammonium hydrogen carbonate aqueous solution. The identity and thickness of graphene sheets were characterized with transmission electron microscopy, atomic force microscopy, and Raman spectroscopy. In addition to its simplicity and scalability, the present synthesis can produce graphene sheets with excellent qualities in terms of sizes, purity, and crystal quality. The as-produced graphene sheets can be easily transferred to solid substrates for further processing. Field-effect transistors based on individual graphenes were fabricated and shown to have high ambipolar carrier mobilities.