Experimental and Theoretical Investigation of the Conduction Band Edge of GaNxP1-x
Experimental and Theoretical Investigation of the Conduction Band Edge of GaNxP1-x
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GaNxP1-x 导带边缘的实验和理论研究
DOI：
10.1103/physrevb.74.241202
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发表时间：
2006
影响因子：
3.7
通讯作者：
E. O’Reilly
中科院分区：
文献类型：
--
作者：
M. Güngerich;P. Klar;W. Heimbrodt;G. Weiser;J. Geisz;C. Harris;A. Lindsay;E. O’Reilly
结果表明，两能级带防交叉模型不能描述$\mathrm{Ga}{\mathrm{N}}_{x}{\mathrm{P}}_{1\ensuremath{-}x}$.中与N相关的态的演化能带结构计算证明，有序GaNp超晶胞中的这些态可以用二能级模型来描述。光电流测量支持无序GaNp中类带隙直接带隙的BAC相关蓝移，但计算和电调制吸收和压强研究表明，低位N相关态的广泛能量分布导致了无序GaNp中涉及多个N能级的反腐蚀相互作用。
We show that a two-level band-anticrossing (BAC) model fails to describe the evolution of N-related states in $\mathrm{Ga}{\mathrm{N}}_{x}{\mathrm{P}}_{1\ensuremath{-}x}$. Band structure calculations prove that a two-level model describes these states in ordered GaNP supercells. Photocurrent measurements support a BAC-related blueshift of the GaP-like direct band gap in disordered GaNP, but calculations and electromodulated absorption and pressure studies show that the wide energy distribution of the lower-lying N-related states leads to the anticrossing interaction involving many N levels in disordered GaNP.