High bandwidth investigations of a baseband linearization approach formulated in the envelope domain under modulated stimulus
High bandwidth investigations of a baseband linearization approach formulated in the envelope domain under modulated stimulus
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在调制激励下包络域中制定的基带线性化方法的高带宽研究
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
J. Mcgeehan
中科院分区：
文献类型：
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作者：
F. L. Ogboi;P. J. Tasker;M. Akmal;J. Lees;Johannes Benedikt;S. B. Smida;Kevin A. Morris;Mark A Beach;J. Mcgeehan
基带注入提供了一种用于线性化功率放大器的有用方法。挑战在于确定所需的基带信号。在[6]中，引入了一种通用公式，该公式量化了在输出偏置端口注入的基带电压信号，以线性化器件行为。这种基于包络域的解决方案仅需要确定少量的线性化系数。更重要的是，这些系数应该是激励的，因此与带宽无关。已使用 10W Cree GaN HEMT 器件在 1.5dB 压缩的 3 音调调制激励下对这一特性进行了实验研究。结果表明，当调制带宽从 2MHz 变化到 20MHz 时，线性化系数保持不变。
Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of linearizing coefficients. More importantly these coefficients should be stimulus, hence bandwidth independent. This property has been experimentally investigated using a 10W Cree GaN HEMT device under a 3-tone modulated stimulus at 1.5dB of compression. It will be shown that the linearization coefficients were invariant when varying the modulation bandwidth from 2MHz to 20MHz.