Multiple Spin Injection Into Coupled Field Generation Layers for Low Current Operation of MAMR Heads
Multiple Spin Injection Into Coupled Field Generation Layers for Low Current Operation of MAMR Heads
复制标题
多重自旋注入耦合场生成层以实现 MAMR 磁头的低电流操作
DOI：
10.1109/tmag.2022.3149049
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发表时间：
2022
影响因子：
2.1
通讯作者：
T. Maeda
中科院分区：
文献类型：
--
作者：
Y. Nakagawa;M. Takagishi;N. Narita;Mikhail Amelyushkin;T. Maeda
微波辅助磁记录（MAMR）是一种很有前途的提高硬盘驱动器（HDD）记录密度的技术。提出了一种用于微波产生的具有两个场产生层（FGL）和两个自旋注入层（锡尔斯）的自旋力矩振荡器（STO）结构。通过使用宏自旋模型和微磁模拟，我们数值模拟表明，低电流操作的STO。FGL的近反平行振荡，使合适的微波分布MAMR，稳定的FGL的面内相位和同步的锡尔斯的轻微调制。FGL之间扩大的间距增强了介质平面处的微波振幅。这些结果表明，通过使用双SIL双FGL STO，用于MAMR的写入头可以使用很少的能量来操作以实现高记录密度。
Microwave-assisted magnetic recording (MAMR) is a promising technique for improving the recording density of hard disk drives (HDDs). We propose a spin-torque oscillator (STO) structure with two field generation layers (FGLs) and two spin-injection layers (SILs) for microwave generation. By using a macrospin model and micromagnetic simulations, we numerically demonstrate the low current operation of the STO. The nearly antiparallel oscillations of the FGLs, which make suitable microwave distribution for MAMR, are stabilized by slight modulation of the in-plane phases of the FGLs and synchronization of the SILs. The enlarged spacing between the FGLs enhances the microwave amplitude at the media plane. These results indicate that, by using the dual-SIL dual-FGL STO, write heads for MAMR can operate using little energy to achieve high recording density.