Fabrication of Self-Aligned Sub-100 nm Iron Wires by Selective Chemical Vapor Deposition
Fabrication of Self-Aligned Sub-100 nm Iron Wires by Selective Chemical Vapor Deposition
复制标题
通过选择性化学气相沉积法制造自对准亚 100 nm 铁线
DOI：
10.1149/1.2353898
复制
发表时间：
2006
影响因子：
--
通讯作者：
H. Gamble
中科院分区：
文献类型：
--
作者：
Y. Low;M. Bain;D. Bien;N. Mitchell;H. Gamble
我们已经展示了结合使用氮化硅间隔技术和通过化学气相沉积 (CVD) 选择性沉积铁和钨来制造和自对准 100 nm 以下铁线的能力。 CVD 铁（来自五羰基 [Fe(CO) 5 ] 前体）在钨表面上的氮化硅表面上选择性沉积的发现是允许铁丝自对准的关键因素。 CVD 铁层的密度和电导率随着沉积温度的升高而提高。 1 分钟的沉积时间足以沉积完美对齐的连续铁丝。沉积的铁层显示出 100% 的选择性。
We have demonstrated the ability to fabricate and self-align sub-100 nm iron wires using a combination of silicon nitride spacer technology and selective deposition of iron and tungsten by chemical vapor deposition (CVD). The discovery of selective deposition of CVD iron, from pentacarbonyl [Fe(CO) 5 ] precursor, on silicon nitride surfaces over tungsten surfaces is the key factor that allows the self-alignment of iron wires. The density and conductivity of the CVD iron layers improved as the deposition temperature increased. Deposition time of 1 min was sufficient to deposit a perfectly aligned, continuous iron wire. The deposited iron layer shows 100% selectivity.