Growth and control of nanoprotrusions on iridium field emitters
Growth and control of nanoprotrusions on iridium field emitters
复制标题
铱场发射器上纳米突起的生长和控制
DOI：
10.1063/1.1364662
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
K. Dean
中科院分区：
文献类型：
--
作者：
B. Chalamala;R. Reuss;K. Dean
我们报告了对铱场发射尖端上纳米突起生长的直接观察。对于干净、无突出的场发射器，场发射源自具有低功函数值的晶面。然而，通过连续操作，我们观察到纳米突起在晶面上的生长，最初没有可检测到的发射。突起的直径估计约为 2-3 nm，高度约为 5-15 nm。突出的增长导致场发射电流增加几个数量级。然而，当持续发射电流值大于 10 μA 时，尖端会被损坏。我们发现通过逐渐降低阳极电压或添加串联电阻可以实现稳定运行和控制突起生长。
We report on the direct observation of the growth of nanoprotrusions on iridium field-emission tips. For clean, protrusion-free field emitters, the field emission originated from crystal planes with low-work-function values. However, with continuous operation, we observed the growth of nanoprotrusions on crystalline planes where there was initially no detectable emission. The protrusions were estimated to be approximately 2–3 nm in diameter and 5–15 nm in height. Protrusion growth led to an increase in field-emission current by several orders of magnitude. However, the tips were destroyed when operated with sustained emission current values greater than 10 μA. We found that stable operation and control of protrusion growth can be achieved by either progressively reducing the anode voltage or by adding a series resistor.