Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes
Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes
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DOI：
10.1063/1.3223576
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发表时间：
2009-08
影响因子：
4
通讯作者：
Jun Zhang;R. Thew;C. Barreiro;H. Zbinden
中科院分区：
文献类型：
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作者：
Jun Zhang;R. Thew;C. Barreiro;H. Zbinden
提出了一种基于InGaAs/InP单光子雪崩光电二极管（SPADs），结合正弦选通和自差分技术的高速近红外单光子探测方法。在921 MHz的选通频率和−30 °C的温度下，我们实现了9.3%的检测效率，暗计数概率为2.8×10−6 ns−1，而后脉冲概率为1.6×10−4 ns−1，10 ns“计数关闭时间”设置。原则上，SPAD的最大计数率可以接近100 MHz，这可以显著提高各种应用的性能。
We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of −30 °C we achieve a detection efficiency of 9.3%, a dark count probability of 2.8×10−6 ns−1, while the afterpulse probability is 1.6×10−4 ns−1, with a 10 ns “count-off time” setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.