Direct synthesis of B-C-N single-walled nanotubes by bias-assisted hot filament chemical vapor deposition
Direct synthesis of B-C-N single-walled nanotubes by bias-assisted hot filament chemical vapor deposition
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DOI：
10.1021/ja0606733
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发表时间：
2006-05-24
影响因子：
15
通讯作者：
Wang, E. G.
中科院分区：
文献类型：
--
作者：
Wang, W. L.;Bai, X. D.;Wang, E. G.
采用偏压辅助HFCVD法直接合成了大尺寸三元硼碳氮单壁纳米管（BCN-SWNTs）。BCN-SWNT是在粉末状的Fe-Mo/MgO催化剂上通过使用CH 4、B2 H6和乙二胺蒸气作为反应气体生长的。高达16原子%的氮可以结合在纳米管壳内，硼含量在2 - 4原子%的范围内。BCN− SWNT的三元共价键性质得到了很好的表征，B、C和N元素图通过能量过滤透射电子显微镜清晰地成像。
Direct synthesis of large-scale ternary boron carbonitride single-walled nanotubes (BCN−SWNTs) via a bias-assisted HFCVD process was presented. The BCN−SWNTs were grown over the powdery Fe−Mo/MgO catalyst by using CH4, B2H6, and ethylenediamine vapor as the reactant gases. As high as 16 atom % nitrogen can be incorporated within the nanotube shells, with the boron content in the range of 2−4 atom %. The ternary covalent bonding nature of the BCN−SWNTs was well characterized, and the B, C, and N elemental maps were clearly imaged by energy-filtered transmission electron microscopy.