A NEW TECHNIQUE FOR MEASURING MOSFET INVERSION LAYER MOBILITY
A NEW TECHNIQUE FOR MEASURING MOSFET INVERSION LAYER MOBILITY
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DOI：
10.1109/16.214740
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发表时间：
1993-06-01
影响因子：
3.1
通讯作者：
ARORA, ND
中科院分区：
文献类型：
--
作者：
HUANG, CL;FARICELLI, JV;ARORA, ND
我们提出了一种新的实验技术，可以准确地确定MOSFET的反转电荷Q(i)和沟道迁移率mu。利用这种新技术，反演电荷可以作为栅极和漏极电压的函数来测量。这种改进使得通道迁移率可以在很宽的电压范围内（V(DS) = 20-100 mV）独立于漏极电压V（DS）提取。得到的mu （V(GS)）曲线显示，在V（TH）附近的V（GS）处，机动性没有剧烈的滚降。这表明，在使用分裂C-V方法提取的迁移率数据中看到的滚降可能是由于不准确的反转电荷测量而不是库仑散射。
We present a new experimental technique to accurately determine both the inversion charge Q(i) and the channel mobility mu of a MOSFET. With this new technique, the inversion charge is measured as a function of the gate and drain voltages. This improvement allows the channel mobility to be extracted independent of drain voltage V(DS) over a wide range of voltages (V(DS) = 20-100 mV). The resulting mu (V(GS)) curves for different V(DS) show no drastic mobility roll-off at V(GS) near V(TH). This suggests that the roll-off seen in the mobility data extracted using the split C-V method is probably due to inaccurate inversion charge measurements instead of Coulombic scattering.