Influence of the p-type doping concentration on reflection-mode GaN photocathode
Influence of the p-type doping concentration on reflection-mode GaN photocathode
复制标题
DOI：
10.1063/1.3556656
复制
发表时间：
2011-02
影响因子：
4
通讯作者：
Xiaohui Wang;Benkang Chang;L. Ren;P. Gao
中科院分区：
文献类型：
--
作者：
Xiaohui Wang;Benkang Chang;L. Ren;P. Gao
用Cs/O激活了4种不同p型掺杂的GaN光电阴极，得到了它们的量子效率（QE）曲线。根据QE方程，拟合了曲线。QE曲线和拟合结果均表明，最佳p型掺杂浓度为1017 cm−3。电子扩散长度和表面电子逃逸几率可以在1017 cm−3处很好地平衡。在一定程度上，厚的发射层有利于提高量子效率，随着波长的增加，这种效果更加明显。
Four different p-type doping GaN photocathodes are activated by Cs/O, and the quantum efficiency (QE) curves are obtained. According to the QE equation, the curves are fitted. Both the QE curves and the fitting results show that the optimal p-type doping concentration is at 1017 cm−3. The electron diffusion length and surface-electron escape probability can be balanced well at 1017 cm−3. To a certain degree, thick emission layer is conducive to improving the QE, which is more obvious with the long wavelength.