Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures
Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures
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DOI：
10.1103/physrevb.86.125318
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发表时间：
2012-09-21
影响因子：
3.7
通讯作者：
Baranovskii, S. D.
中科院分区：
文献类型：
--
作者：
Jandieri, K.;Shakfa, M. K.;Baranovskii, S. D.
在多组分半导体异质结构中，组分涨落引起的无序势对光致发光有很大的影响。我们对Ga（N，P，As）/GaP量子阱中温度相关的光致发光进行了实验研究，结果表明，随着组分（氮）浓度的增加，无序的能量尺度减小.这种效应强烈地表明，对能带结构和有效质量的影响都随着N浓度的增加而减小。这一结论是支持的理论估计，使用混合晶体中的成分波动的分析理论。
In many-component semiconductor heterostructures photoluminescence (PL) is strongly affected by the disorder potentials caused by compositional fluctuations. We present an experimental study on the temperature-dependent PL in the Ga(N,P,As)/GaP quantum well which indicates the intriguing feature that the energy scale of the disorder decreases with increasing concentration of the fluctuating compositional component (nitrogen). This effect strongly suggests that the impact on the band structure and the effective mass both decrease as the N concentration increases. This conclusion is supported by theoretical estimates using the analytical theory of compositional fluctuations in mixed crystals.