Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor
Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor
复制标题
DOI：
10.1063/5.0040173
复制
发表时间：
2021-05
影响因子：
3.2
通讯作者：
W. Milestone;D. Guo;M. Sanati;K. Dowling;S. Hau-Riege;L. Voss;A. Conway;R. Joshi
中科院分区：
文献类型：
--
作者：
W. Milestone;D. Guo;M. Sanati;K. Dowling;S. Hau-Riege;L. Voss;A. Conway;R. Joshi
基于动力学Monte Carlo模拟方法对纤锌矿GaN光电导开关的光响应特性进行了研究。重点是电子传输物理和评估高频操作。GaN能带结构的作用，泡利排除，和基于快速多极方法的内场的处理都全面包括在内。通过GaN的速度场特性与文献中的计算结果的比较，验证了该实现。1 μm器件的光电流宽度预计小于107 ps，这意味着上限为100 GHz。基于GaN的空间电荷效应和负微分速度特性的相互作用，预测了在高电场下光电流脉冲压缩低于激光半峰全宽。
Evaluation of the photoresponse in wurtzite GaN photoconductive switches is presented based on kinetic Monte Carlo simulations. The focus is on electron transport physics and assessment of high frequency operation. The roles of GaN band structure, Pauli exclusion, and treatment of internal fields based on the fast multipole method are all comprehensively included. The implementation was validated through comparisons of velocity-field characteristics for GaN with computational results in the literature. Photocurrent widths of less than ∼7 ps for the 1 μm device can be expected, which translates into a 100 GHz upper bound. Photocurrent pulse compression below the laser full width at half maxima at high applied fields are predicted based on the interplay of space-charge effects and the negative differential velocity characteristics of GaN.