Domain-Wall Pinning and Depinning at Soft Spots in Magnetic Nanowires
Domain-Wall Pinning and Depinning at Soft Spots in Magnetic Nanowires
复制标题
磁性纳米线软点处的畴壁钉扎和脱钉
DOI：
10.1109/tmag.2010.2042285
复制
发表时间：
2010
影响因子：
2.1
通讯作者：
J. Fassbender
中科院分区：
文献类型：
--
作者：
A. Vogel;S. Wintz;Judith Kimling;M. Bolte;T. Strache;M. Fritzsche;M. Im;P. Fischer;G. Meier;J. Fassbender
离子辐照对磁性能的局部修饰，为磁性纳米线的畴壁创建钉钉位点提供了可能，而不受几何约束。在Ni80Fe20纳米线中注入铬离子可引起饱和磁化强度Ms的局部降低，从而降低与畴壁相关的能量。利用磁透射软x射线显微镜直接观察到磁场驱动的磁软点处畴壁的钉钉和脱钉。钉钉率和脱屑场在很大程度上取决于线材宽度和铬含量。
The local modification of magnetic properties by ion irradiation opens the possibility to create pinning sites for domain walls in magnetic nanowires without geometric constrictions. Implantation of chromium ions into Ni80Fe20 nanowires is used to cause a local reduction of the saturation magnetization Ms and thus a decrease of the energy associated with the domain wall. Field-driven pinning and depinning of a domain wall at the here so-called magnetic soft spots is directly observed using magnetic transmission soft X-ray microscopy. The pinning rate and the depinning field considerably depend on the wire width and the chromium fluence.