Advanced Mask Inspection and Metrology
Advanced Mask Inspection and Metrology
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先进的掩模检测和计量
DOI：
10.1063/1.1622500
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发表时间：
2003
影响因子：
1.4
通讯作者：
T. Terasawa
中科院分区：
文献类型：
--
作者：
N. Yoshioka;T. Terasawa
光刻是在衬底上形成掩模图案图像的最重要的半导体微制造技术之一。由于掩模是半导体图案的原始版本，因此掩模孔径尺寸的精确控制变得至关重要。掩模必须以精确控制的图案和零缺陷来制作。因此，保证掩模质量的掩模检测和计量是实现高可靠性和高成品率半导体生产的重要关键技术。先进的检测和计量技术正在发展。这些技术的要求，技术问题，和当前的状态报告。还报道了用于下一代光刻的掩模检查技术，例如电子投影光刻（EPL）和极紫外光刻（EUVL）。
Lithography is one of the most important semiconductor micro‐fabrication technologies that form mask pattern images onto the substrate. Since a mask is the original edition of semiconductor patterns, precise control of the mask aperture size becomes critical. The masks have to be made up in the accurately controlled patterns and zero defects. Therefore, mask inspection and metrology that guarantee the mask qualities are important key technologies for realizing the semiconductor production with high reliability and high yield. The advanced inspection and metrology are being developed. The requirements, technical issues, and current status of these technologies are reported. Mask inspection technologies for next generation lithography such as electron projection lithography (EPL) and extreme ultraviolet lithography (EUVL) are also reported.