Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal
Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal
复制标题
原子氢退火非晶硅低温晶化机理
DOI：
10.1016/s0022-3093(99)00754-1
复制
发表时间：
2000
影响因子：
3.5
通讯作者：
H. Matsumura
中科院分区：
文献类型：
--
作者：
A. Heya;A. Masuda;H. Matsumura
使用SiH4和H2气体混合物通过催化化学气相沉积方法制备的非晶硅(a-Si)薄膜在<350°C的温度下通过在原子氢中退火(原子氢退火：AHA)而结晶。氢气在加热的钨催化剂上发生催化裂化反应产生原子氢。 AHA使a-Si薄膜样品的结晶率从0%提高到几十%，同时AHA对样品进行几十nm/min的刻蚀。 AHA 的结晶和蚀刻取决于与初始非晶硅薄膜样品中的潜在结晶度相关的结构特性。
Amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition method using SiH4and H2gas mixtures are crystallized at temperatures <350°C by annealing in atomic hydrogen, (atomic hydrogen anneal: AHA). Atomic hydrogen was generated by catalytic cracking reaction of H2gas on a heated tungsten catalyzer. The crystalline fraction of a-Si film sample increased from 0% to several-tens% by AHA, and at the same time, the sample was etched with a rate of several-tens nm/min by AHA. Crystallization and etching by AHA depend on structural properties which are related to potential crystallinity in the initial a-Si film samples.