Design And Application Guide For High Speed MOSFET Gate Drive Circuits By
Design And Application Guide For High Speed MOSFET Gate Drive Circuits By
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发表时间：
2006
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通讯作者：
L. Balogh
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作者：
L. Balogh
本文的主要目的是展示一个系统的方法来设计高性能的门驱动电路的高速开关应用。它是一个信息丰富的主题集合，提供了一个“一站式购物”，以解决最常见的设计挑战。因此，它应该是感兴趣的电力电子工程师在所有层次的经验。分析了最流行的电路解决方案及其性能，包括寄生元件的影响，瞬态和极端工作条件。讨论从简单到更复杂的问题，从MOSFET技术和开关操作的概述开始。详细介绍了接地参考和高端栅极驱动电路、交流耦合和Transformer隔离解决方案的设计过程。专门的一章介绍了同步整流器应用中MOSFET的栅极驱动要求。几个逐步的数值设计例子补充了本文。
The main purpose of this paper is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special chapter deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. Several, step-by-step numerical design examples complement the paper.